Transistor IGBT, G80N60UFD, 600 V, 80 A
The G80N60UFD is an ultrafast 600 V, 80 A insulated‑gate bipolar transistor in a robust TO‑3P package, designed for high‑efficiency...
power electronics design
The G80N60UFD is an ultrafast 600 V, 80 A insulated‑gate bipolar transistor in a robust TO‑3P package, designed for high‑efficiency...