Transistor IGBT, G80N60UFD, 600 V, 80 A

The G80N60UFD is an ultrafast 600 V, 80 A insulated‑gate bipolar transistor in a robust TO‑3P package, designed for high‑efficiency industrial inverters. Combining MOSFET‑like gate control with low saturation voltage and a co‑pack fast recovery diode, it is ideal for motor drives, induction heating, welding machines, UPS and PFC stages.